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Electron glass effects in amorphous NbSi films

by J. Delahaye, T. Grenet, C. A Marrache-Kikuchi, V. Humbert, L. Bergé, L. Dumoulin

Submission summary

As Contributors: Julien Delahaye
Arxiv Link: https://arxiv.org/abs/2001.01437v1
Date submitted: 2020-01-07
Submitted by: Delahaye, Julien
Submitted to: SciPost Physics
Discipline: Physics
Subject area: Condensed Matter Physics - Experiment
Approach: Experimental

Abstract

We report on non equilibrium field effect in insulating amorphous NbSi thin films having different Nb contents and thicknesses. The hallmark of an electron glass, namely the logarithmic growth of a memory dip in conductance versus gate voltage curves, is observed in all the films after a cooling from room temperature to 4.2 K. A very rich phenomenology is demonstrated. While the memory dip width is found to strongly vary with the film parameters, as was also observed in amorphous indium oxide films, screening lengths and temperature dependence of the dynamics are closer to what is observed in granular Al films. Our results demonstrate that the differentiation between continuous and discontinuous systems is not relevant to understand the discrepancies reported between various systems in the electron glass features. We suggest instead that they are not of fundamental nature and stem from differences in the protocols used and in the electrical inhomogeneity length scales within each material.

Current status:
Editor-in-charge assigned


Submission & Refereeing History

Submission 2001.01437v1 on 7 January 2020

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