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Spin and Orbital Spectroscopy in the Absence of Coulomb Blockade in Lead Telluride Nanowire Quantum Dots
by M. Gomanko, E. J. de Jong, Y. Jiang, S. G. Schellingerhout, E. P. A. M. Bakkers, S. M. Frolov
This Submission thread is now published as
Submission summary
Authors (as registered SciPost users): | Sergey Frolov |
Submission information | |
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Preprint Link: | https://arxiv.org/abs/2111.13242v2 (pdf) |
Date accepted: | 2022-08-11 |
Date submitted: | 2022-05-24 23:04 |
Submitted by: | Frolov, Sergey |
Submitted to: | SciPost Physics |
Ontological classification | |
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Academic field: | Physics |
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Approach: | Experimental |
Abstract
We investigate quantum dots in semiconductor PbTe nanowire devices. Due to the accessibility of ambipolar transport in PbTe, quantum dots can be occupied both with electrons and holes. Owing to a very large dielectric constant in PbTe of order 1000, we do not observe Coulomb blockade which typically obfuscates the orbital and spin spectra. We extract large and highly anisotropic effective Lande g-factors, in the range 20-44. The absence of Coulomb blockade allows direct readout, at zero source-drain bias, of spin-orbit hybridization energies of up to 600 microelectronvolt. These spin properties make PbTe nanowires, the recently synthesized members of group IV-VI materials family, attractive as a materials platform for quantum technology, such as spin and topological qubits.
Author comments upon resubmission
First of all, thank you for your feedback on this paper.
Indeed, there were a few overlooked issues with the paper (a couple of references missing, device description details lacking), which are revised and fixed now. We improved the literature coverage of IV-VI semiconductor nanowires in the introductory part and added more experimental details about our nanowires and devices, and how they are different from each other.
We comment in subsequent posts in more detail.
Published as SciPost Phys. 13, 089 (2022)
Sergey Frolov on 2022-05-24 [id 2521]
Referee 2
Response: we expanded our literature overview.
Response: We have now specified these parameters.
Response: We explained this now. There are two types of devices: with a top gate and without, and most measurements are on top-gate devices. They are nominally the same, though the nanowires are different, including their diameters, as well as contact spacings.
Response: Thanks for pointing it out, we reference these papers in the revised manuscript.
Response: We edited the “brief methods” section so there will be more details about our nanowires growth ([100] axis on GaAs[111] substrates and their dimensions.
We also added a comment on differences between our devices and reference supplementary figure S1 that illustrates them.
Fixed, now it specifies that these figures are in the supplementary section.
That was a typo, a reference got broken, fixed now. Thanks!
Sergey Frolov on 2022-05-24 [id 2520]
Referee 1:
Strengths - The authors carry out mesoscopic measurements on PbTe nanowire quantum dots and discuss their potential for quantum devices. PbTe can have strong spin-orbit splitting and has a large g-factor, making it indeed attractive for the application that the authors consider. It is actually surprising that this material has not yet been considered for this research direction. - The strength and anisotropy of the g-factor are measured for the first time in such structures and argue that PbTe can compete with III-Vs. - The type of measurements combined with the analysis that is carried out are novel and can lead to progress and more questions in an important research area. This is especially true given the fact that the dielectric constant of PbTe is high, which has both advantages and disadvantages when it comes to quantum device performance as pointed out by the authors. - A sufficient number of devices have been studied and are reported on.
In quantum dots with Coulomb energy, valley degeneracy is relatively easy to establish, for instance in carbon nanotube quantum dots three small diamonds followed by a large diamond signify two-fold valley degeneracy. In quantum dots with quenched Coulomb interaction, we cannot see this. But we may be able to identify other means of understanding what happens to the valley degree of freedom in these devices in subsequent measurements.
We added this discussion to the manuscript.
Report The authors report mesoscopic transport measurements done on PbTe nanowire quantum dots. The measurements allow the extraction of the spin-orbit coupling strength and the g-factor of PbTe. The measurements are well presented and the results are important as they demonstrate the potential of PbTe compared to III-V materials for semiconductor-superconductor hybrids. This is especially important for quantum computing devices and the search for Majorana modes. I think the manuscript is suitable for this journal and should be considered for publication based on criterion 3 for acceptance: Open a new pathway in an existing or a new research direction, with clear potential for multipronged follow-up work. But before it can be accepted, the authors should address the issues listed below, in the requested changes.
We added a discussion of this point and the references the referee pointed to.
It is more likely that several quantum dots are created in the nanowire. In future measurements, we shall use local gates that would allow us to define quantum dots, including multiple dots, with greater control and distinguish between these possibilities.
We did not perform any measurements at higher temperatures, except for quick 1D bias and gate sweeps for backgate-only devices (5-8) to check IV curves and backgate voltage dependence. There was no study of these nanowires at higher temperatures except for wire resistance at room temperature to choose devices for cooldown.
It is not surprising to see conductance quantization at higher temperatures. In fact it should get more clear once coherence length is suppressed by temperature and conductance fluctuations due to quantum interference are reduced in amplitude. The energy scale of quantized subbands is ~1meV which is 10K.