Enhancement of chiral edge currents in ($d$+1)-dimensional atomic Mott-band hybrid insulators

Ferraretto, Matteo; Richaud, Andrea; Del Re, Lorenzo; Fallani, Leonardo; Capone, Massimo

doi:10.21468/SciPostPhys.14.3.048

SciPost Physics

Enhancement of chiral edge currents in ($d$+1)-dimensional atomic Mott-band hybrid insulators

Matteo Ferraretto, Andrea Richaud, Lorenzo Del Re, Leonardo Fallani, Massimo Capone

SciPost Phys. 14, 048 (2023) · published 24 March 2023

doi: 10.21468/SciPostPhys.14.3.048
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Abstract

We consider the effect of a local interatomic repulsion on synthetic heterostructures where a discrete synthetic dimension is created by Raman processes on top of $SU(N)$-symmetric two-dimensional lattice systems. At a filling of one fermion per site, increasing the interaction strength, the system is driven towards a Mott state which is adiabatically connected to a band insulator. The chiral currents associated with the synthetic magnetic field increase all the way to the Mott transition, where they reach the maximum value, and they remain finite in the whole insulating state. The transition towards the Mott-band insulator is associated with the opening of a gap within the low-energy quasiparticle peak, while a mean-field picture is recovered deep in the insulating state.

TY  - JOUR
PB  - SciPost Foundation
DO  - 10.21468/SciPostPhys.14.3.048
TI  - Enhancement of chiral edge currents in ($d$+1)-dimensional atomic Mott-band hybrid insulators
PY  - 2023/03/24
UR  - https://scipost.org/SciPostPhys.14.3.048
JF  - SciPost Physics
JA  - SciPost Phys.
VL  - 14
IS  - 3
SP  - 048
A1  - Ferraretto, Matteo
AU  - Richaud, Andrea
AU  - Del Re, Lorenzo
AU  - Fallani, Leonardo
AU  - Capone, Massimo
AB  - We consider the effect of a local interatomic repulsion on synthetic heterostructures where a discrete synthetic dimension is created by Raman processes on top of $SU(N)$-symmetric two-dimensional lattice systems. At a filling of one fermion per site, increasing the interaction strength, the system is driven towards a Mott state which is adiabatically connected to a band insulator. The chiral currents associated with the synthetic magnetic field increase all the way to the Mott transition, where they reach the maximum value, and they remain finite in the whole insulating state. The transition towards the Mott-band insulator is associated with the opening of a gap within the low-energy quasiparticle peak, while a mean-field picture is recovered deep in the insulating state.
ER  -

@Article{10.21468/SciPostPhys.14.3.048,
	title={{Enhancement of chiral edge currents in ($d$+1)-dimensional atomic Mott-band hybrid insulators}},
	author={Matteo Ferraretto and Andrea Richaud and Lorenzo Del Re and Leonardo Fallani and Massimo Capone},
	journal={SciPost Phys.},
	volume={14},
	pages={048},
	year={2023},
	publisher={SciPost},
	doi={10.21468/SciPostPhys.14.3.048},
	url={https://scipost.org/10.21468/SciPostPhys.14.3.048},
}

Cited by 5

Authors / Affiliations: mappings to Contributors and Organizations

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¹ Matteo Ferraretto,
¹ Andrea Richaud,
² ³ Lorenzo Del Re,
⁴ ⁵ ⁶ Leonardo Fallani,
¹ ⁷ Massimo Capone

Funders for the research work leading to this publication

European Research Council [ERC]
Ministero dell'Università e della Ricerca
Ministero dell’Istruzione, dell’Università e della Ricerca (MIUR) (through Organization: Ministero dell'Istruzione, dell'Università e della Ricerca / Ministry of Education, Universities and Research [MIUR])
United States Department of Energy [DOE]