Reconstructing the potential configuration in a high-mobility semiconductor heterostructure with scanning gate microscopy
Gaëtan J. Percebois, Antonio Lacerda-Santos, Boris Brun, Benoit Hackens, Xavier Waintal, Dietmar Weinmann
SciPost Phys. 15, 242 (2023) · published 15 December 2023
- doi: 10.21468/SciPostPhys.15.6.242
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Abstract
The weak disorder potential seen by the electrons of a two-dimensional electron gas in high-mobility semiconductor heterostructures leads to fluctuations in the physical properties and can be an issue for nanodevices. In this paper, we show that a scanning gate microscopy (SGM) image contains information about the disorder potential, and that a machine learning approach based on SGM data can be used to determine the disorder. We reconstruct the electric potential of a sample from its experimental SGM data and validate the result through an estimate of its accuracy.
Cited by 1
Authors / Affiliations: mappings to Contributors and Organizations
See all Organizations.- 1 Gaëtan J. Percebois,
- 2 Antonio Lacerda-Santos,
- 2 Boris Brun,
- 3 Benoit Hackens,
- 2 Xavier Waintal,
- 1 Dietmar Weinmann
- 1 Institut de Physique et Chimie des Matériaux de Strasbourg [IPCMS]
- 2 Université Grenoble Alpes / Grenoble Alpes University [UGA]
- 3 Université catholique de Louvain [UCL]