Contributor info: Dr Robert Scheuermann

Rui C. Vilão, Ali Roonkiani, Apostolos G. Marinopoulos, Helena V. Alberto, João M. Gil, Ricardo B. L. Vieira, Robert Scheuermann, Alois Weidinger

SciPost Phys. Core 8, 056 (2025) · published 26 August 2025 | Toggle abstract · pdf

We present an in-depth investigation of the implantation of positive muons in magnesium oxide (MgO). Muonium, the positive muon plus an electron is an analogue of the hydrogen atom. This study describes the final stage of the implantation process, from muon diffusion over the potential barrier and the stopping by an inelastic reaction to the final embedding of the muon into the lattice structure. A special aspect is a relatively long-lived intermediate configuration which lasts for several hundred nanoseconds or more and is accessible to muon spin spectroscopy. The model presented here provides a framework for the analysis of the general case of ion implantation.