Muonium reaction in MgO: A showcase for the final steps of ion implantation
Rui C. Vilão, Ali Roonkiani, Apostolos G. Marinopoulos, Helena V. Alberto, João M. Gil, Ricardo B. L. Vieira, Robert Scheuermann, Alois Weidinger
SciPost Phys. Core 8, 056 (2025) · published 26 August 2025
- doi: 10.21468/SciPostPhysCore.8.3.056
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Abstract
We present an in-depth investigation of the implantation of positive muons in magnesium oxide (MgO). Muonium, the positive muon plus an electron is an analogue of the hydrogen atom. This study describes the final stage of the implantation process, from muon diffusion over the potential barrier and the stopping by an inelastic reaction to the final embedding of the muon into the lattice structure. A special aspect is a relatively long-lived intermediate configuration which lasts for several hundred nanoseconds or more and is accessible to muon spin spectroscopy. The model presented here provides a framework for the analysis of the general case of ion implantation.
Authors / Affiliations: mappings to Contributors and Organizations
See all Organizations.- 1 Rui Vilão,
- 1 Ali Roonkiani,
- 1 Apostolos G. Marinopoulos,
- 1 Helena V. Alberto,
- 1 João M. Gil,
- 1 Ricardo B. L. Vieira,
- 2 Robert Scheuermann,
- 3 Alois Weidinger
- 1 Universidade de Coimbra / University of Coimbra
- 2 Paul Scherrer Institute [PSI]
- 3 Helmholtz-Zentrum Berlin für Materialien und Energie
- Fundação para a Ciência e a Tecnologia (through Organization: Fundação para a Ciência e Tecnologia [FCT])
