Contributor info: Prof. Julio Antonio Larrea Jimenez

C. Kaufmann Ribeiro , L. Mello , V. Martelli , D. Cornejo, M. B. Silva Neto , E. Fogh , H. M. Rønnow, J. Larrea Jiménez

SciPost Phys. Proc. 11, 023 (2023) · published 5 September 2023 | Toggle abstract · pdf

The role of controlled Fe antisite disorder in the narrow gap semiconductor FeGa$_3$ has been investigated. Polycrystalline samples were synthesized by the combination of arc-melting furnace and successive annealing processes. Deviations from occupation numbers of Fe and Ga sites expected in the pristine compound were obtained from X-ray data using Rietveld refinement analysis. Besides that, electrical transport and magnetization measurements reveal that hierarchy in Fe and Ga site disorder tunes the ground state of FeGa$_3$ from paramagnetic semiconductor to a magnetic metal. These findings are discussed inside the framework of Anderson localization in the vicinity of metal-semiconductor transitions and spin fluctuations.

F. Passos, D. Cornejo, G. J. Nilsen, V. Martelli, J. Larrea Jiménez

SciPost Phys. Proc. 11, 021 (2023) · published 6 June 2023 | Toggle abstract · pdf

SmCo$_5$ and YCo$_5$ are isostructural compounds both showing large magnetocrystalline anisotropy, where the former originates mainly from the crystal-electric field and magnetic interactions. We investigate the contribution of both interactions by partially substituting Y by Sm in as-cast polycrystalline Y$_{1-x}$Sm$_{x}$Co$_5$ (with $x$=0.00, 0.12, 0.18, 0.31, and 0.40) and measuring their structural, magnetic, and electrical properties through X-ray diffraction, magnetization, and electrical transport measurements. Our results suggest an interplay between microstructure strain in as-cast samples and the electronic and magnetic interactions.