Investigation of role of antisite disorder in pristine cage compound FeGa$_3$
C. Kaufmann Ribeiro , L. Mello , V. Martelli , D. Cornejo, M. B. Silva Neto , E. Fogh , H. M. Rønnow, J. Larrea Jiménez
SciPost Phys. Proc. 11, 023 (2023) · published 5 September 2023
- doi: 10.21468/SciPostPhysProc.11.023
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Proceedings event
International Conference on Strongly Correlated Electron Systems
Abstract
The role of controlled Fe antisite disorder in the narrow gap semiconductor FeGa$_3$ has been investigated. Polycrystalline samples were synthesized by the combination of arc-melting furnace and successive annealing processes. Deviations from occupation numbers of Fe and Ga sites expected in the pristine compound were obtained from X-ray data using Rietveld refinement analysis. Besides that, electrical transport and magnetization measurements reveal that hierarchy in Fe and Ga site disorder tunes the ground state of FeGa$_3$ from paramagnetic semiconductor to a magnetic metal. These findings are discussed inside the framework of Anderson localization in the vicinity of metal-semiconductor transitions and spin fluctuations.
Cited by 1
Authors / Affiliations: mappings to Contributors and Organizations
See all Organizations.- 1 Cauê Kaufmann Ribeiro,
- 1 L. Mello,
- 1 V. Martelli,
- 1 D. Cornejo,
- 2 M. B. Silva Neto,
- 3 E. Fogh,
- 3 Henrik Rønnow,
- 1 Julio Antonio Larrea Jiménez
- 1 Universidade de São Paulo / University of Sao Paulo [USP]
- 2 Universidade Federal do Rio de Janeiro / Federal University of Rio de Janeiro [UFRJ]
- 3 École Polytechnique Fédérale de Lausanne [EPFL]