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Investigation of role of antisite disorder in pristine cage compound FeGa3
by C. Kaufmann Ribeiro , L. Mello , V. Martelli , D. Cornejo , M. Fantini , M. B. Silva Neto , E. Fogh , H. M. Rønnow and J. Larrea Jiménez
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Submission summary
| Authors (as registered SciPost users): | Cauê Kaufmann Ribeiro |
| Submission information | |
|---|---|
| Preprint Link: | scipost_202208_00034v1 (pdf) |
| Date submitted: | 2022-08-15 17:58 |
| Submitted by: | Kaufmann Ribeiro, Cauê |
| Submitted to: | SciPost Physics Proceedings |
| Proceedings issue: | International Conference on Strongly Correlated Electron Systems (SCES2022) |
| Ontological classification | |
|---|---|
| Academic field: | Physics |
| Specialties: |
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| Approach: | Experimental |
Abstract
The role of controlled disorder in the strong correlated narrow gap semiconductor candidate FeGa3 has been investigated. Polycrystalline samples were synthesized by the combination of arc-melting furnace and successive annealing processes. Deviations of the occupation number of Fe and Ga sites from those expected in the pristine compound were quantified with X-ray analysis. Besides that, electrical transport and magnetization measurements reveal that hierarchy in Fe and Ga site disorder tunes the ground state of FeGa3 from paramagnetic semiconducting to a magnetic metal. These findings are discussed within the framework of Anderson metal-insulator transitions and spin fluctuations.
Current status:
Reports on this Submission
Strengths
- Complete study of the effect of annealing on electronic properties FeGa3.
- Well written.
Weaknesses
1: The interpretation of the measured resistivity of the as-grown sample is not very solid.
Report
The paper discusses work presented at the SCES conference and has not been published before.
Requested changes
1: in the last paragraph on page 3, the structure factor S(q) is discussed. It is not clear what the difference is between pristine poly-crystals and results presented. It is also not clear how the data for the pristine sample is obtained. Is this from a different study? More details would be useful. The last sentence of the same paragraph is also not very clearly formulated. Please rewrite.
2: On page 4 the SON is discussed. It is not clear from the description how it is obtained from the XRD data. A reference would be useful.
3: On page 5 it is stated that defects induce a magnetic state. What is this based on? All magnetization data is paramagnetic. The susceptibility increases, but that does not imply a magnetic state.
4: On page 5, the sentence “This metal-semiconductor transition oppositely…” is unclear. Please reformulate.
5: On page 5 it is stated that the ‘large Af indicates a strong renormalization of the effective electronic mass’. This conclusion is unlikely. It is much more likely that defects result in additional free carriers that (i) contribute to increased paramagnetic susceptibility and enhanced momentum relaxation. This can be explained within textbook framework and doesn’t require reference to electronic correlations or spin fluctuations. The latter is speculation. It would be better to put possible alternative interpretations in the discussion section only.
6: Figure 5 requires labels (a,b, etc.). The caption of the figure refers to ‘not-annealed’, please replace with as-cast for consistency.
7: page 7, metal-insulator -> metal-semiconductor.