SciPost Submission Page
Investigation of role of antisite disorder in pristine cage compound FeGa3
by C. Kaufmann Ribeiro , L. Mello , V. Martelli , D. Cornejo , M. Fantini , M. B. Silva Neto , E. Fogh , H. M. Rønnow and J. Larrea Jiménez
This Submission thread is now published as
Submission summary
| Authors (as registered SciPost users): | Cauê Kaufmann Ribeiro |
| Submission information | |
|---|---|
| Preprint Link: | scipost_202208_00034v2 (pdf) |
| Date accepted: | 2023-05-09 |
| Date submitted: | 2023-03-25 16:55 |
| Submitted by: | Kaufmann Ribeiro, Cauê |
| Submitted to: | SciPost Physics Proceedings |
| Proceedings issue: | International Conference on Strongly Correlated Electron Systems (SCES2022) |
| Ontological classification | |
|---|---|
| Academic field: | Physics |
| Specialties: |
|
| Approach: | Experimental |
Abstract
The role of controlled Fe antisite disorder in the narrow gap semiconductor FeGa$_3$ has been investigated. Polycrystalline samples were synthesized by the combination of arc-melting furnace and successive annealing processes. Deviations from occupation numbers of Fe and Ga sites expected in the pristine compound were obtained from X-ray data using Rietveld refinement analysis. Besides that, electrical transport and magnetization measurements reveal that hierarchy in Fe and Ga site disorder tunes the ground state of FeGa$_3$ from paramagnetic semiconductor to a magnetic metal. These findings are discussed inside the framework of Anderson localization in the vicinity of metal-semiconductor transitions and spin fluctuations.
Author comments upon resubmission
List of changes
1 - We have included a detailed description of the calculation of the structure factor S(q).
2- We have included a detailed description on how SON are obtained from XRD Rietveld analysis
3- We change the claiming that defects induce a magnetic state, substituting by paramagnetic state and including a more detailed discussion of the magnetic properties of our compound.
4- We have included a careful discussion on the electrical resistivity of the as-cast grown sample, including a new explanation to the large Af.
5- We correct the labels in the figures 5.
Published as SciPost Phys. Proc. 11, 023 (2023)