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Investigation of role of antisite disorder in pristine cage compound FeGa3
by C. Kaufmann Ribeiro , L. Mello , V. Martelli , D. Cornejo , M. Fantini , M. B. Silva Neto , E. Fogh , H. M. Rønnow and J. Larrea Jiménez
This Submission thread is now published as
Submission summary
| Authors (as registered SciPost users): | Cauê Kaufmann Ribeiro |
| Submission information | |
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| Preprint Link: | scipost_202208_00034v2 (pdf) |
| Date accepted: | 2023-05-09 |
| Date submitted: | 2023-03-25 16:55 |
| Submitted by: | Kaufmann Ribeiro, Cauê |
| Submitted to: | SciPost Physics Proceedings |
| Proceedings issue: | International Conference on Strongly Correlated Electron Systems (SCES2022) |
| Ontological classification | |
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| Academic field: | Physics |
| Specialties: |
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| Approach: | Experimental |
Abstract
The role of controlled Fe antisite disorder in the narrow gap semiconductor FeGa3 has been investigated. Polycrystalline samples were synthesized by the combination of arc-melting furnace and successive annealing processes. Deviations from occupation numbers of Fe and Ga sites expected in the pristine compound were obtained from X-ray data using Rietveld refinement analysis. Besides that, electrical transport and magnetization measurements reveal that hierarchy in Fe and Ga site disorder tunes the ground state of FeGa3 from paramagnetic semiconductor to a magnetic metal. These findings are discussed inside the framework of Anderson localization in the vicinity of metal-semiconductor transitions and spin fluctuations.
Author comments upon resubmission
List of changes
1 - We have included a detailed description of the calculation of the structure factor S(q).
2- We have included a detailed description on how SON are obtained from XRD Rietveld analysis
3- We change the claiming that defects induce a magnetic state, substituting by paramagnetic state and including a more detailed discussion of the magnetic properties of our compound.
4- We have included a careful discussion on the electrical resistivity of the as-cast grown sample, including a new explanation to the large Af.
5- We correct the labels in the figures 5.
Published as SciPost Phys. Proc. 11, 023 (2023)