Vertical and Lateral Manipulation of Single Cs atoms on the Semiconductor InAs(111)A

Dear editor,

We thank the referees for their input and you for giving us the opportunity to resubmit our manuscript.

As outlined below, we have included a brief discussion on the linewidths we observe in our experiments in our revised manuscript. As suggested by the referee, we compare the linewidth to those observed for other non-superconducting material systems. When making this comparison, it is important to realize that linewidths depend strongly on the density of adsorbates on the surface, as well as on barrier height. For example, for In on InAs(111)A, the FWHM varies between ~30 mV for a linear chain of 22 atoms, to ~10 mV for a chain of 6 atoms. Similarly, for corrals on Cu(111), the peak width increases as the corrals become smaller (more scatterers per unit area). In addition, the peaks become wider the higher they are in energy. A detailed investigation of how linewidth for Cs/InAs(111)A depend on nanostructure shape and size is certainly very interesting and worth undertaking but we feel that this is outside the scope of the present manuscript, which focusses on the manipulation of adsorbates.

We hope that the changes described below sufficiently address the final comments of the referees.

On behalf of all authors,

Best regards from Utrecht,
Ingmar Swart

Following the suggestion of the referees, we modified the text discussing the full-width-at-half-maximum on page 8.
Form version 2:
“The spectrum of the hexagon exhibits a sharp peak at -0.25V, demonstrating the formation of a localized electronic state inside the bandgap of the substrate. This verifies that the Cs atoms on InAs(111)A are charged. The full-width-at-half-maximum of the peak is 33 mV, much narrower than lineshapes observed for quantum corrals of CO/Cu(111). [6] This demonstrates the feasibility of constructing artificial lattices using the Cs on InAs(111)A platform"

To version 3:
"The spectrum of the hexagon exhibits a sharp peak at -0.25V, demonstrating the formation of a localized electronic state inside the bandgap of the substrate. This verifies that the Cs atoms on InAs(111)A are charged and demonstrates that this platform can be used to construct artificial lattices. The full-width-at-half-maximum (FWHM) of the peak is 33 mV, much narrower than lineshapes observed for artificial lattices made using the CO/Cu(111) platform, but comparable to that of a 22-atom long In chain on InAs(111)A. [15,30] For In/InAs(111)A, the linewidth depends on the density of In atoms in the nanostructure (also expected for Cs/InAs(111)A) and can be as small as 10 mV for a line of six In atoms. [30] This is similar to the ≈7mV FWHM observed for the Cs octagon on InSb(110). [7]"